Cutoff wavelengths tailored by choice of Ge content. Infrared detectors based on internal photoemission at Si1-xGex/Si heterojunctions exhibited photoresponses at wavelengths from 2 to 12 micrometers in initial tests. Si1-xGex/Si-heterojunction internal-photoemission detectors tailored for use at wavelengths of order of 10 micrometers. Future developments expected to include integration of such devices with silicon readout circuitry to form infrared-imaging arrays. Imaging arrays operating in important wavelength range of 8 to 12 micrometers can be fabricated relatively inexpensively for use in outer-space, military, and industrial applications.


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    Title :

    Si1-XGex/Si-Heterojunction Internal-Photoemission Detectors


    Contributors:

    Published in:

    Publication date :

    1992-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English






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