We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.


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    Title :

    All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect


    Contributors:
    Casalino, M. (author) / Sirleto, L. (author) / Iodice, M. (author) / Gioffre, M. (author) / Rendina, I. (author) / Coppola, G. (author)


    Publication date :

    2011-09-01


    Size :

    836457 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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