We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.


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    Titel :

    All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect


    Beteiligte:
    Casalino, M. (Autor:in) / Sirleto, L. (Autor:in) / Iodice, M. (Autor:in) / Gioffre, M. (Autor:in) / Rendina, I. (Autor:in) / Coppola, G. (Autor:in)


    Erscheinungsdatum :

    01.09.2011


    Format / Umfang :

    836457 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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