We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.
All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect
01.09.2011
836457 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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