Superlattice of LaN and Si detects at wavelengths up to 12 micrometers. If LaN grown epitaxially on silicon, sensitivity of silicon-based photodetectors extended farther into infrared wavelength region with high quantum detection efficiency by use of LaN/Si superlattices. In principle, by appropriate choice of thicknesses of layers, effective band-gap energy of superlattice structure set to any desired value between band gaps of two materials.


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    Title :

    Superlattice Long-Wavelength Infrared Sensors


    Contributors:

    Published in:

    Publication date :

    1990-05-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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