Superlattice of LaN and Si detects at wavelengths up to 12 micrometers. If LaN grown epitaxially on silicon, sensitivity of silicon-based photodetectors extended farther into infrared wavelength region with high quantum detection efficiency by use of LaN/Si superlattices. In principle, by appropriate choice of thicknesses of layers, effective band-gap energy of superlattice structure set to any desired value between band gaps of two materials.
Superlattice Long-Wavelength Infrared Sensors
NASA Tech Briefs ; 14 , 5
1990-05-01
Sonstige
Keine Angabe
Englisch
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