Uniformly thin single-crystal films of silicon produced by modification of fluidized-bed-reactor technique producing polysilicon by chemical vapor deposition. Proposed for silicon wafers for flat-plate solar arrays and results in different structural and electronic properties in deposition layer desirable for specific microelectronic or solar-cell processing. In process deposition occurs on silicon wafers, kept individually at temperatures above 1,000 degree C. Heated wafers held in unheated and minimally-agitated-fluidized bed of silicon particles and in low concentration of silane.


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    Title :

    Fluidized-Bed Deposition Of Single-Crystal Silicon


    Contributors:

    Published in:

    Publication date :

    1988-02-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English


    Keywords :


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