Uniformly thin single-crystal films of silicon produced by modification of fluidized-bed-reactor technique producing polysilicon by chemical vapor deposition. Proposed for silicon wafers for flat-plate solar arrays and results in different structural and electronic properties in deposition layer desirable for specific microelectronic or solar-cell processing. In process deposition occurs on silicon wafers, kept individually at temperatures above 1,000 degree C. Heated wafers held in unheated and minimally-agitated-fluidized bed of silicon particles and in low concentration of silane.


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    Titel :

    Fluidized-Bed Deposition Of Single-Crystal Silicon


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.02.1988



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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