Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.
GaAs Semi-Insulating Layer for a GaAs Device
NASA Tech Briefs ; 10 , 5
1986-09-01
Miscellaneous
No indication
English
Electronic properties of grown-in defects in semi-insulating GaAs
British Library Conference Proceedings | 1999
|GaAs/AlGaAs Buried -Heterostructure Laser Diodes with Semi-Insulating GaInP:Fe Regrowth
British Library Conference Proceedings | 2001
|