Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    GaAs Semi-Insulating Layer for a GaAs Device


    Contributors:

    Published in:

    Publication date :

    1986-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




    Transient Space-Charge Waves in Semi-insulating GaAs Photoconductor

    Qu, Guang-Hui / Xie, Guang-Yong / Shi, Wei | IEEE | 2006


    Electronic properties of grown-in defects in semi-insulating GaAs

    Kozlowski, R. / Pawiowski, M. / Kaminski, P. et al. | British Library Conference Proceedings | 1999


    GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth

    Angulo Barrios, C. / Lourdudoss, S. / Messmer, L.R. et al. | IEEE | 2001


    GaAs/AlGaAs Buried -Heterostructure Laser Diodes with Semi-Insulating GaInP:Fe Regrowth

    Barrios, C. A. / Lourdudoss, S. / Messmer, E. R. et al. | British Library Conference Proceedings | 2001


    Photorefractive wave mixing in semi-insulating InGaAs/GaAs multiple quantum wells

    Iwamoto, S. / Kageshima, H. / Yuasa, T. et al. | IEEE | 1999