Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.


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    Titel :

    GaAs Semi-Insulating Layer for a GaAs Device


    Beteiligte:
    Sherrill, G. (Autor:in) / Mattauch, R. J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.09.1986



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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