Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.


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    Title :

    Submicron Silicon MOSFET


    Contributors:
    Daud, T. (author)

    Published in:

    Publication date :

    1986-07-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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