Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.


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    Titel :

    Submicron Silicon MOSFET


    Beteiligte:
    Daud, T. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1986-07-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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