Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.
Submicron Silicon MOSFET
NASA Tech Briefs ; 10 , 1
1986-07-01
Sonstige
Keine Angabe
Englisch
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