New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.


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    Title :

    High-Mobility Epitaxial Silicon Wafers


    Contributors:
    Stermer, R. L., Jr (author) / Fripp, A. L., Jr. (author) / Jones, A. (author) / Mcmullen, J. (author) / Manasevit, H. (author) / Gergis, I. (author) / Soclof, S. (author)

    Published in:

    Publication date :

    1985-01-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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