New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.
High-Mobility Epitaxial Silicon Wafers
NASA Tech Briefs ; 8 , 3
1985-01-01
Miscellaneous
No indication
English
Heterojunction solar cells with 23% efficiency on n‐type epitaxial kerfless silicon wafers
Online Contents | 2016
|Laser scribing of silicon wafers
NTRS | 1970
|Automatic inspection of silicon wafers
NTRS | 1980
|Smoother Scribing of Silicon Wafers
NTRS | 1986
|Reciprocating Saw for Silicon Wafers
NTRS | 1985
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