Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.


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    Title :

    Asymmetric Die Grows Purer Silicon Ribbon


    Contributors:
    Kalejs, J. P. (author) / Chalmers, B. (author) / Surek, T. (author)

    Published in:

    Publication date :

    1983-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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