Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.
Asymmetric Die Grows Purer Silicon Ribbon
NASA Tech Briefs ; 7 , 1
1983-03-01
Miscellaneous
No indication
English
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