Single-crystal ribbon of silicon or other material is grown by pulling at low angle from shallow melt. By pulling crystal at small angle, technique prevents overflow problem experienced with horizontal growth. Also creates meniscus that minimizes growth defects in main portion of ribbon. Use of shallow pool prevents convection problems.
Technique for Crystal-Ribbon Growth
NASA Tech Briefs ; 7 , 1
1983-03-01
Miscellaneous
No indication
English
Proposed Technique of Crystal-Ribbon Growth
NTRS | 1984
|Starting Silicon-Ribbon Growth Automatically
NTRS | 1984
|Sublid Speeds Growth Of Silicon Ribbon
NTRS | 1988
|Numerical Simulation Of Silicon-Ribbon Growth
NTRS | 1987
|Faster Edge-Define Silicon-Ribbon Growth
NTRS | 1986
|