Single-crystal ribbon of silicon or other material is grown by pulling at low angle from shallow melt. By pulling crystal at small angle, technique prevents overflow problem experienced with horizontal growth. Also creates meniscus that minimizes growth defects in main portion of ribbon. Use of shallow pool prevents convection problems.


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    Title :

    Technique for Crystal-Ribbon Growth


    Contributors:

    Published in:

    Publication date :

    1983-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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