Single-crystal ribbon of silicon or other material is grown by pulling at low angle from shallow melt. By pulling crystal at small angle, technique prevents overflow problem experienced with horizontal growth. Also creates meniscus that minimizes growth defects in main portion of ribbon. Use of shallow pool prevents convection problems.
Technique for Crystal-Ribbon Growth
NASA Tech Briefs ; 7 , 1
01.03.1983
Sonstige
Keine Angabe
Englisch
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