Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.


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    Titel :

    Numerical Simulation Of Silicon-Ribbon Growth


    Beteiligte:
    Woda, Ben K. (Autor:in) / Kuo, Chin-Po (Autor:in) / Utku, Senol (Autor:in) / Ray, Sujit Kumar (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1987-11-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :




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