An application in which CCD optical imaging arrays with 250,000 elements are fabricated from the best commercially available float zone Si is described. Two image defects are described which appear to be related to the starting material. The striation effect appears to be caused by resistivity and recombination center variations. Up to 30 percent variations in resistivity was measured across a sample.
Problems with state-of-the-art float zone silicon
1980-12-01
Conference paper
No indication
English
Float zone silicon for IR detectors
NTRS | 1980
|NTRS | 1981
|NTRS | 1980
|NTIS | 1981
|NTIS | 1980
|