An overview of the state of the art of processing silicon for use as infrared detectors is presented. Improvements in the process that could be obtained in a low-g environment were examined. The various requirements for the different types of Si detector materials are summarized.
Float zone silicon for IR detectors
1980-12-01
Conference paper
No indication
English
NTRS | 1981
|NTIS | 1980
|NTRS | 1980
|NTIS | 1981
|Problems with state-of-the-art float zone silicon
NTRS | 1980
|