An overview of the state of the art of processing silicon for use as infrared detectors is presented. Improvements in the process that could be obtained in a low-g environment were examined. The various requirements for the different types of Si detector materials are summarized.
Float zone silicon for IR detectors
01.12.1980
Aufsatz (Konferenz)
Keine Angabe
Englisch
NTRS | 1981
|NTRS | 1980
|NTIS | 1980
|NTIS | 1981
|Problems with state-of-the-art float zone silicon
NTRS | 1980
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