An application in which CCD optical imaging arrays with 250,000 elements are fabricated from the best commercially available float zone Si is described. Two image defects are described which appear to be related to the starting material. The striation effect appears to be caused by resistivity and recombination center variations. Up to 30 percent variations in resistivity was measured across a sample.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Problems with state-of-the-art float zone silicon


    Beteiligte:


    Erscheinungsdatum :

    01.12.1980


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


    Float zone silicon for IR detectors

    Kern, E. L. | NTRS | 1980


    Float Zone Workshop

    Naumann, R. J. | NTRS | 1980


    Float Zone Workshop

    E. L. Kern / E. K. Cothran | NTRS | 1981


    Float Zone Workshop

    E. L. Kern / E. K. Cothran | NTIS | 1981


    Float Zone Workshop

    R. J. Naumann | NTIS | 1980