Formation of carbon monoxide gas is prevented by a linear of refractory material free of elemental carbon. For pressures above about 4 torr, silicon carbide can be used as refractory liner. The problem of carbide contamination can arise in crystal growth of any material that forms a carbide more stable than carbon monoxide. Prevention in such cases is possible by using noncarbon refractories in place of graphite.


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    Title :

    Refractories Keep Silicon Crystals Pure


    Contributors:
    Schmid, F. (author) / Khattak, C. P. (author)

    Published in:

    Publication date :

    1982-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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