Formation of carbon monoxide gas is prevented by a linear of refractory material free of elemental carbon. For pressures above about 4 torr, silicon carbide can be used as refractory liner. The problem of carbide contamination can arise in crystal growth of any material that forms a carbide more stable than carbon monoxide. Prevention in such cases is possible by using noncarbon refractories in place of graphite.


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    Titel :

    Refractories Keep Silicon Crystals Pure


    Beteiligte:
    Schmid, F. (Autor:in) / Khattak, C. P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1982-09-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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