Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.
Improving MOS minority-carrier lifetime
NASA Tech Briefs ; 5 , 3
1981-01-01
Miscellaneous
No indication
English
Broad range injection-dependent minority carrier lifetime from photoluminescence
Online Contents | 2012
|Recovery of minority carrier lifetime in low-cost multicrystalline silicon
Online Contents | 2002
|Contactless measurement of minority carrier lifetime in silicon ingots and bricks
Online Contents | 2011
|Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures [4795-37]
British Library Conference Proceedings | 2002
|