Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.


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    Titel :

    Improving MOS minority-carrier lifetime


    Beteiligte:
    Cockrum, R. H. (Autor:in) / Li, S. P. (Autor:in) / Prussin, S. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1981



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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