The transient photo-generated excess minority carrier lifetime in Hg1-xCdxTe n+p junction photodetector are measured using improved photo-induced open-circuit voltage decay (OCVD) technique. The lifetimes we extracte from the decay curve of the photovoltage are from tens to hundreds ns. A comparison of the relationship between composition of Cd and minority carrier lifetime show the lifetimes become longer with the increasing of Cd composition.


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    Title :

    Measurement of Minority Carrier Lifetime in Hg1-xCdxTe Photodetector


    Contributors:
    Cui, H. Y. (author) / Li, Z. F. (author) / Xu, X. Y. (author) / Liu, Z. L. (author) / Quan, Z. J. (author) / Lu, W. (author)


    Publication date :

    2006-09-01


    Size :

    1149016 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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