Processing procedure using low-temperature platinum silicide, results in successful high-yield fabrication of large-area mesa-geometry Schottky diodes, with reverse breakdown voltages as high as 150 volts and leak currents less than 5 milliamps at 212 F.


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    Title :

    New process produces high-power Schottky diodes


    Contributors:
    Cordes, L. F. (author) / Garfinkel, M. (author) / Taft, E. A. (author)

    Published in:

    Publication date :

    1977-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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