Processing procedure using low-temperature platinum silicide, results in successful high-yield fabrication of large-area mesa-geometry Schottky diodes, with reverse breakdown voltages as high as 150 volts and leak currents less than 5 milliamps at 212 F.


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    Titel :

    New process produces high-power Schottky diodes


    Beteiligte:
    Cordes, L. F. (Autor:in) / Garfinkel, M. (Autor:in) / Taft, E. A. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1977-03-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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