Processing procedure using low-temperature platinum silicide, results in successful high-yield fabrication of large-area mesa-geometry Schottky diodes, with reverse breakdown voltages as high as 150 volts and leak currents less than 5 milliamps at 212 F.
New process produces high-power Schottky diodes
NASA Tech Briefs ; 2 , 4
1977-03-01
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Englisch