We have developed Schottky diodes using semiconducting nanotubes with titanium Schottky and platinum Ohmic contacts. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. The performance prediction as room-temperature detectors at 2.5 THz resulted in NEP potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes in the range of 10/sup -13/ W//spl radic/Hz.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Carbon nanotube Schottky diodes for high frequency applications


    Contributors:
    Manohara, H.M. (author) / Wong, E.W. (author) / Schlecht, E. (author) / Hunt, R.D. (author) / Siegel, P.H. (author)


    Publication date :

    2005-01-01


    Size :

    1781518 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    TB3-7 Carbon Nanotube Schottky Diodes for High Frequency Applications

    Manohara, H. / Wong, E. W. / Schlecht, E. et al. | British Library Conference Proceedings | 2005


    Far-infrared response of Schottky diodes: high-frequency limit

    Mordovets, N.A. / Kotel'nikov, I.N. / Shul'man, A.Ya. | IEEE | 1989


    New process produces high-power Schottky diodes

    Cordes, L. F. / Garfinkel, M. / Taft, E. A. | NTRS | 1977


    Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers

    Cojocari, O. / Popa, V. / Ursaki, V.V. et al. | IEEE | 2004


    P1_16 Systematic Quality Assessment of Schottky Diodes for THz-Applications

    Biber, S. / Schmidt, L.-P. / Cojocari, O. et al. | British Library Conference Proceedings | 2003