We have developed Schottky diodes using semiconducting nanotubes with titanium Schottky and platinum Ohmic contacts. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. The performance prediction as room-temperature detectors at 2.5 THz resulted in NEP potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes in the range of 10/sup -13/ W//spl radic/Hz.
Carbon nanotube Schottky diodes for high frequency applications
2005-01-01
1781518 byte
Conference paper
Electronic Resource
English
TB3-7 Carbon Nanotube Schottky Diodes for High Frequency Applications
British Library Conference Proceedings | 2005
|New process produces high-power Schottky diodes
NTRS | 1977
|P1_16 Systematic Quality Assessment of Schottky Diodes for THz-Applications
British Library Conference Proceedings | 2003
|