Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements and electrical characterisation. DC-characteristics of 5 /spl mu/m-diameter anodes result in a cut-off frequency of 390 GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed.


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    Title :

    Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers


    Contributors:
    Cojocari, O. (author) / Popa, V. (author) / Ursaki, V.V. (author) / Tiginyanu, I.M. (author) / Mutamba, K. (author) / Saglam, M. (author) / Hartnagel, H.L. (author)


    Publication date :

    2004-01-01


    Size :

    187320 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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