Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements and electrical characterisation. DC-characteristics of 5 /spl mu/m-diameter anodes result in a cut-off frequency of 390 GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed.
Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers
01.01.2004
187320 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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