Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements and electrical characterisation. DC-characteristics of 5 /spl mu/m-diameter anodes result in a cut-off frequency of 390 GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed.


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    Titel :

    Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers


    Beteiligte:
    Cojocari, O. (Autor:in) / Popa, V. (Autor:in) / Ursaki, V.V. (Autor:in) / Tiginyanu, I.M. (Autor:in) / Mutamba, K. (Autor:in) / Saglam, M. (Autor:in) / Hartnagel, H.L. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    187320 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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