Phenomenological study of radiation damage and recoverability of metal oxide field effect transistors


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    Title :

    Phenomenological study of radiation damage and recovery of metal-oxide field effect transistors


    Contributors:

    Conference:

    IEEE ANN. CONF. ON NUCL. AND SPACE RADIATION EFFECTS ; 1966 ; PALO ALTO, CA, UNITED STATES


    Publication date :

    1966-01-01


    Type of media :

    Report


    Type of material :

    No indication


    Language :

    English




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