Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.


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    Title :

    Radiation Damage In Advanced Bipolar Transistors


    Contributors:

    Published in:

    Publication date :

    1989-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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