Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.
Radiation Damage In Advanced Bipolar Transistors
NASA Tech Briefs ; 13 , 9
1989-09-01
Miscellaneous
No indication
English
Reliability of microwave bipolar silicon transistors
Tema Archive | 1991
|Doping To Reduce Base Resistances Of Bipolar Transistors
NTRS | 1991
|ST Rad-Hard Power Bipolar Transistors Product Portofolio
British Library Conference Proceedings | 2011
|