Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.
Doping To Reduce Base Resistances Of Bipolar Transistors
NASA Tech Briefs ; 15 , 5
1991-05-01
Miscellaneous
No indication
English
Tractive resistances in the Loetschberg base tunnel
British Library Online Contents | 2008
|Engineering Index Backfile | 1897
|Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base
British Library Conference Proceedings | 2012
|Reliability of microwave bipolar silicon transistors
Tema Archive | 1991
|