Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.


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    Title :

    Doping To Reduce Base Resistances Of Bipolar Transistors


    Contributors:

    Published in:

    Publication date :

    1991-05-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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