Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.


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    Titel :

    Doping To Reduce Base Resistances Of Bipolar Transistors


    Beteiligte:
    Lin, True-Lon (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.05.1991



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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