To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices.


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    Title :

    High-Temperature Electronics


    Contributors:
    L. G. Matus (author) / G. T. Seng (author)

    Publication date :

    1990


    Size :

    9 pages


    Type of media :

    Report


    Type of material :

    No indication


    Language :

    English




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