To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    High-Temperature Electronics


    Beteiligte:
    L. G. Matus (Autor:in) / G. T. Seng (Autor:in)

    Erscheinungsdatum :

    1990


    Format / Umfang :

    9 pages


    Medientyp :

    Report


    Format :

    Keine Angabe


    Sprache :

    Englisch




    High-temperature electronics

    Matus, Lawrence G. / Seng, Gary T. | NTRS | 1990


    High Temperature SiC Electronics

    Neudeck, Philip G. | NTRS | 2011




    "High Temperature Electronics for Automotive Applications"

    Constapel, R. / Freytag, J. / Hille, P. et al. | British Library Conference Proceedings | 2000