To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices.


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    Titel :

    High-temperature electronics


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.02.1990


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Keine Angabe


    Sprache :

    Englisch




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