Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.
Reliability of wide bandgap semiconductor power switching devices
2010-07-01
703786 byte
Conference paper
Electronic Resource
English
Reliability Assessment of Wide Bandgap Power Devices
NTRS | 2015
|Wide-bandgap semiconductor devices for automobile applications
Tema Archive | 2006
|Wide Bandgap Semiconductor Light Emitters
British Library Online Contents | 1997
|Contacts for Wide Bandgap Semiconductor Materials
British Library Conference Proceedings | 1997
|