Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.


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    Title :

    Reliability of wide bandgap semiconductor power switching devices


    Contributors:
    Shenai, K (author)


    Publication date :

    2010-07-01


    Size :

    703786 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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