Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.
Reliability of wide bandgap semiconductor power switching devices
01.07.2010
703786 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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