In this paper, requirements of power devices for automobile applications are discussed , especially hybrid vehicles, and the development of GaN power devices at Toyota. AlGaN/ GaN HEMTs were fabricated and their characteristics were measured . The breakdown voltage was over 600 V. The drain current with a gate width of 31mm was over 8A. Observation by a thermograph image of the device under high current operation showed the AlGaN/GaN HEMT operated at more than 300 deg C. All the results of GaN are really promising to realize high performance and small size inverters for future automobiles.


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    Title :

    Wide-bandgap semiconductor devices for automobile applications


    Additional title:

    Leistungstransistor auf GaN-Basis für die Anwendung im Hybridfahrzeug


    Contributors:
    Ueda, H. (author) / Sugimoto, M. (author) / Uesugi, T. (author) / Kachi, T. (author)


    Publication date :

    2006


    Size :

    4 Seiten, 8 Bilder, 1 Tabelle, 9 Quellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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