We developed an ultrafast all-optical AND gate at 1.55/spl mu/m based on low-temperature-grown Be-doped strained InGaAs/InAlAs MQWs. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity.


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    Title :

    Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells


    Contributors:
    Takahashi, R. (author) / Choi, W.-Y. (author) / Kawamura, Y. (author) / Iwamura, H. (author)


    Publication date :

    1995-01-01


    Size :

    182187 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Femtosecond All-Optical AND Gates Based on Low-Temperature-Grown Be-Doped Strained InGaAs/InAlAs Multiple Quantum Wells

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Performance of Strained InGaAs/InAlAs Multiple-Quantum-Well Electroabsorption Modulators

    Ido, T. / Sano, H. / Tanaka, S. et al. | British Library Online Contents | 1996