We developed an ultrafast all-optical AND gate at 1.55/spl mu/m based on low-temperature-grown Be-doped strained InGaAs/InAlAs MQWs. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity.
Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells
1995-01-01
182187 byte
Conference paper
Electronic Resource
English
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