We developed an ultrafast all-optical AND gate at 1.55/spl mu/m based on low-temperature-grown Be-doped strained InGaAs/InAlAs MQWs. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells


    Beteiligte:
    Takahashi, R. (Autor:in) / Choi, W.-Y. (Autor:in) / Kawamura, Y. (Autor:in) / Iwamura, H. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    182187 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Femtosecond All-Optical AND Gates Based on Low-Temperature-Grown Be-Doped Strained InGaAs/InAlAs Multiple Quantum Wells

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Performance of Strained InGaAs/InAlAs Multiple-Quantum-Well Electroabsorption Modulators

    Ido, T. / Sano, H. / Tanaka, S. et al. | British Library Online Contents | 1996