Growth of electroluminescent devices operating at 2 /spl mu/m based on quantum cascade (QC) design of strain-compensated In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As has been undertaken. Experimentally measured current-voltage characteristics are in good agreement with theoretical predictions.


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    Titel :

    Electrical characteristics of highly strained InGaAs/InAlAs 2 /spl mu/m quantum cascade light-emitting devices


    Beteiligte:
    Banerjee, S. (Autor:in) / Shore, K.A. (Autor:in) / Mitchell, C.J. (Autor:in) / Sly, J.L. (Autor:in) / Missous, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    126532 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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