Growth of electroluminescent devices operating at 2 /spl mu/m based on quantum cascade (QC) design of strain-compensated In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As has been undertaken. Experimentally measured current-voltage characteristics are in good agreement with theoretical predictions.


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    Title :

    Electrical characteristics of highly strained InGaAs/InAlAs 2 /spl mu/m quantum cascade light-emitting devices


    Contributors:
    Banerjee, S. (author) / Shore, K.A. (author) / Mitchell, C.J. (author) / Sly, J.L. (author) / Missous, M. (author)


    Publication date :

    2004-01-01


    Size :

    126532 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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