Growth of electroluminescent devices operating at 2 /spl mu/m based on quantum cascade (QC) design of strain-compensated In/sub x/Ga/sub 1-x/As/In/sub y/Al/sub 1-y/As has been undertaken. Experimentally measured current-voltage characteristics are in good agreement with theoretical predictions.
Electrical characteristics of highly strained InGaAs/InAlAs 2 /spl mu/m quantum cascade light-emitting devices
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
126532 byte
Conference paper
Electronic Resource
English
Performance of Strained InGaAs/InAlAs Multiple-Quantum-Well Electroabsorption Modulators
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