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    Titel :

    A New Class of Normal Incidence P-type Strained-Layer InGaAs/InAlAs and InGaAs/GaAs Quantum Well Infrared Photodetectors for 8-12m Detection



    Kongress:

    7th Annual meeting, LEOS '94 ; 1994 ; Boston; MA


    Erschienen in:

    Erscheinungsdatum :

    1994-01-01


    Format / Umfang :

    25 pages


    Anmerkungen:

    In 2 vols; IEEE Cat no 94CH3371-2



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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