Previous research on terahertz optical rectification from zincblende semiconductors indicated that there was an enhancement of the resonant second-order nonlinear susceptibility near the bandgap in these materials. Because the bandgap of a semiconductor changes with temperature, it is important to study the resonant behavior of the second-order nonlinear susceptibility as a function of temperature near the bandgap. The authors report their recent studies of the temperature dependence of terahertz optical rectification from <111> oriented zincblende crystals (GaAs and InP) near their bandgap. The results showed that an enhancement of the resonant second-order nonlinear susceptibility occurred when the incident photon energy was slightly higher than the bandgap of the zincblende crystal at different temperatures.


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    Title :

    Temperature dependence of resonant second order susceptibility


    Contributors:
    Jin, Y. (author) / Liu, D.F. (author) / Wagoner, G.A. (author) / Zhang, X.-C. (author) / Bliss, D. (author) / Larkin, J. (author) / Alexander, M. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 85-86 vol.2


    Publication date :

    1994-01-01


    Size :

    132220 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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