Tensile strained-silicon waveguides were produced by LPCVD (780°C) by depositing a 150 nm-thick Si3N4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon.


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    Title :

    Second-order susceptibility χ(2) in Si waveguides


    Contributors:
    Bianco, F. (author) / Borga, E. (author) / Yeremian, A. (author) / Dierre, B. (author) / Fedus, K. (author) / Bettotti, P. (author) / Pitanti, A. (author) / Pierobon, R. (author) / Ghulinyan, M. (author) / Pucker, G. (author)


    Publication date :

    2011-09-01


    Size :

    591215 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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