Tensile strained-silicon waveguides were produced by LPCVD (780°C) by depositing a 150 nm-thick Si3N4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon.
Second-order susceptibility χ(2) in Si waveguides
01.09.2011
591215 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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