GaN and related binaries and alloys have received a great deal of attention owing to their direct bandgaps which are conducive for emitters and detectors in the portion of the spectrum from green to UV. In this presentation, pathways leading to defect reduction, primarily in bulk films and quantum wells grown by MBE, as gauged by optical probes are discussed.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE


    Contributors:
    Morkoc, H. (author)


    Publication date :

    1996-01-01


    Size :

    61348 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Optical Properties of Wide Bandgap Nitride Semiconductor Heterostructures Grown by MBE

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Wide Bandgap Semiconductor Light Emitters

    Hopper, C. | British Library Online Contents | 1997


    Contacts for Wide Bandgap Semiconductor Materials

    Lamp, T. / Liu, S. / Ramalingam, M. L. et al. | British Library Conference Proceedings | 1997


    Material Design of Wide Bandgap III-V Nitride Alloys

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Wide-bandgap semiconductor devices for automobile applications

    Ueda, H. / Sugimoto, M. / Uesugi, T. et al. | Tema Archive | 2006