GaN and related binaries and alloys have received a great deal of attention owing to their direct bandgaps which are conducive for emitters and detectors in the portion of the spectrum from green to UV. In this presentation, pathways leading to defect reduction, primarily in bulk films and quantum wells grown by MBE, as gauged by optical probes are discussed.


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    Titel :

    Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE


    Beteiligte:
    Morkoc, H. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    61348 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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