GaN and related binaries and alloys have received a great deal of attention owing to their direct bandgaps which are conducive for emitters and detectors in the portion of the spectrum from green to UV. In this presentation, pathways leading to defect reduction, primarily in bulk films and quantum wells grown by MBE, as gauged by optical probes are discussed.
Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE
01.01.1996
61348 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Optical Properties of Wide Bandgap Nitride Semiconductor Heterostructures Grown by MBE
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